Nanolasers grown on silicon-based MOSFETs.

نویسندگان

  • Fanglu Lu
  • Thai-Truong D Tran
  • Wai Son Ko
  • Kar Wei Ng
  • Roger Chen
  • Connie Chang-Hasnain
چکیده

We report novel indium gallium arsenide (InGaAs) nanopillar lasers that are monolithically grown on (100)-silicon-based functional metal-oxide-semiconductor field effect transistors (MOSFETs) at low temperature (410 °C). The MOSFETs maintain their performance after the nanopillar growth, providing a direct demonstration of complementary metal-oxide-semiconudctor (CMOS) compatibility. Room-temperature operation of optically pumped lasers is also achieved. To our knowledge, this is the first time that monolithically integrated lasers and transistors have been shown to work on the same silicon chip, serving as a proof-of-concept that such integration can be extended to more complicated CMOS integrated circuits.

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عنوان ژورنال:
  • Optics express

دوره 20 11  شماره 

صفحات  -

تاریخ انتشار 2012